The organic thin film transistor was prepared by using pentacene on SiOC film, which was prepared by the plasma enhanced chemical vapor deposition and annealed in a vacuum. It was analyzed the dielectric constant, thickness, refractive indexes and O 1s electron orbital spectra by X-ray photoelectron spectroscopyof SiOC films, to obtain the correlation between the characteristic of SiOC and high performance of thin film transistor. The tunneling behavior of organic thin film transistor (OTFT) depended on the characteristic of the surface of gate insulator. Low polarization SiOC enhanced the mobility of TFT because of the possibility of perpendicular growth of pentacene molecule on substrate with low surface energy. The dielectric constant was decreased by the reduction of polarities, which contribute to produces low surface energies achieved from the more stable SiOC with increasing the oxygen related bonding strength in O 1s electron orbital spectra.

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