Photoelectric properties of thin film heterojunctions have been studied in rather wide range of light wavelength (0.31,4 m), temperature (1005000C) as well as duration (020 min) of thermal processing. In the course of carrying out the experiments it was found that the heterojunctions that were undergo to thermal processing possess higher photosensitivity in the wavelength range of (0,41,25 m). When these structures are illuminated from the side of semiconductor with wide band gap ( ) is developed the photo electromotive force whose sign does not change in all range of photosensitivity. Chief parameters of the investigated structures were estimated for their illumination by W = 100500 mW/sm2 intensity. It has been found that values of these parameters in addition to other factors depend also on the composition of films.

Full text: IJEIR_1254_Final.pdf