Base Stored Charge Modeling of Insulated Gate Bipolar Transistor
| Research Area: | Volume 4 Issue 2, March. 2015 | Year: | 2015 |
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| Type of Publication: | Article | Keywords: | Parabolic Approximation, Minority Excess Charge Concentration, Effective Base Width, Ambipolar Diffusion Length, Carrier Lifetime Control |
| Authors: |
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| Journal: | IJEIR | Volume: | 4 |
| Number: | 2 | Pages: | 248-252 |
| Month: | March | ||
| ISSN: | 2277-5668 | ||
| Abstract: | This work presents an analytical model of the base stored charge of a Non Punch Through Insulated Gate Bipolar Transistor for all minority carrier lifetime conditions. Parabolic approximation has been used for derivation of minority carrier concentration within the base. Better agreements with the actual hyperbolic model have been found compared to the linear model generally used. This model can be useful in modeling IGBT parameters for Reverse Blocking applications where nonlinear characteristics play a prominent role |
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Full text:
 IJEIR-1432_final.pdf | |||
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